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2SC2309D
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, TO-92

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Description

: 

Silicon NPN Epitaxial Transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to base voltage VCBO = 55 V
2. Collector to emitter voltage VCEO = 50 V
3. Emitter to base voltage VEBO 5V Collector current IC = 100 mA
4. Collector power dissipation PC = 200 mW
5. Junction temperature Tj = 150 °C
6. Storage temperature Tstg = –55 to +150 °C

Applications : 

Low Frequency amplifier



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