2SC1971 PDF Datasheet

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Description

2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

Features :

1. Emitter ballasted construction, gold metallization for high reliability and good performances.

2. TO-220 package similar is combinient for mounting.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 35 V

2. Collector to Emitter Voltage : Vceo = 17 V

3. Emitter to Base Voltage : Vebo = 4 V

4. Collector Current : Ic = 2 A

5. Total Dissipation : Pc = 1.5 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

: 4 to 5 watts output power amplifiers in VHF band applications.