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Toshiba

2SC1678

Silicon NPN Epitaxial Planar Type

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Description

:

NPN SILICON PLANAR EPITAXIAL POWER TRANSISTOR

Features :

1. With TO-220 package

2. Low collector saturation voltage

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 65 V

2. Collector to Emitter Voltage : Vceo = 65 V

3. Emitter to Base Voltage : Vebo = 4 V

4. Collector Current : Ic = 3 A

5. Total Dissipation : Pc = 10 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

27MHz RF power amplifier

Please enter the part number.

2SV-09  |  2SK950

2SK94  |  2SK82

2SK59  |  2SK43

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