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Description

NPN Silicon Transistor

Features : 

1. High breakdown voltage : Vcer = 210V

2. This triple-diffused planar transistor assures high reliability.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 210 V

2. Collector to Emitter Voltage : Vceo = 210 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 30 mA

5. Total Dissipation : Pc = 150 mW

6. Junction Temperature : Tj = 125°C

7. Storage Temperatue : Tsg = -55 ~ +125°C

 Applications : 

: High gain amplifier