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Description

Silicon NPN Power Transistor


Features :

1. With TO-3 package

2. High power dissipation

3. High breakdown voltage

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 350 V

2. Collector to Emitter Voltage : Vceo = 250 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 2 A

5. Total Dissipation : Pc = 80 W

6. Junction Temperature : Tj = 150°C 

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

For voltage regulator, inverter and switching mode power supply applications