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Description

Silicon NPN Power Transistor

Features : 

1. With TO-66 package
2. High breakdown voltage

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1100 V

2. Emitter to Base Voltage : Vebo = 13 V

3. Collector Current : Ic = 1 A

4. Total Dissipation : Pc = 25 W

5. Junction Temperature : Tj = 150°C

6. Storage Temperatue : Tsg = -65 ~ +150°C

Applications : 

1. For horizontal deflection output