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Toshiba
2SB688
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
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Description

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The UTC 2SB688 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

PNP EPITAXIAL SILICON TRANSISTOR, HIGH POWER AMPLIFIER APPLICATION

Features

1. Complementary to 2SD718.

2. Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 120 V

2. Collector to Emitter Voltage : Vceo = - 120 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 10 A

5. Total Dissipation : Pc = 80 W

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -40 ~ +200°C



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