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2SB1642
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Description

:

Silicon PNP epitaxial planar type transistor 

Features : 

1. With TO-220F package

2. Low collector saturation voltage : 
  Vce(sat)= -1.5V(Max) at Ic=-2.5A, Ib=-0.25A

3. Collector power dissipation :   Pc=25W(TC=25'C)

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 60 V

2. Collector to Emitter Voltage : Vceo = - 60 V

3. Emitter to Base Voltage : Vebo = - 7 V

4. Collector Current : Ic = - 4 A

5. Total Dissipation : Pc = 2 W

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

Low-voltage switching

 



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