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Description

PNP silicon low frequency transistor

Features : 

1) Low VCE(sat). VCE(sat)= −0.35V (Typ.) (IC/IB=−4A /−0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 30 V

2. Collector to Emitter Voltage : Vceo = - 20 V

3. Emitter to Base Voltage : Vebo = - 6 V

4. Collector Current : Ic = - 5 V

5. Total Dissipation : Pc = 1 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

Low frequency transistor