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2SB1392-C
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Description

:

Silicon PNP Triple Diffused Transistor


Features : 

1. With TO-220Fa package

2. Low collector saturation voltage

3. Wide area of safe operation 

4. For low frequency power amplifier applications

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 70 V

2. Collector to Emitter Voltage : Vceo = - 60 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 4 A

5. Total Dissipation : Pc = 2 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C



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