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PDF 2SA2069 Download

Toshiba
2SA2069(TE12L,F)
Trans GP BJT PNP 20V 1.5A 4-Pin(3+Tab) PW-Mini T/R
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Description

:

Silicon PNP Epitaxial Type Transistor

 

Features : 

•  High DC current gain: hFE= 200 to 500 (IC= −0.5 A)

•  Low collector-emitter saturation: VCE (sat)= −0.27 V (max)

•  High-speed switching: tf= 55 ns (typ.)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 20 V

2. Collector to Emitter Voltage : Vceo = - 20 V

3. Emitter to Base Voltage : Vebo = - 7 V

4. Collector Current : Ic = - 1.5 A

5. Total Dissipation : Pc = 1 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C


Applications :

1. High-Speed Switching 

2. DC-DC Converter 



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