Description:Silicon PNP epitaxial planer type Transistor Features : 1. For low-frequency high breakdown voltage amplification Complementary to 2SC5346 2. Satisfactory foward current transfer ratio hFE collector current IC characteristics. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = - 150 V 2. Collector to Emitter Voltage : Vceo = - 150 V 3. Emitter to Base Voltage : Vebo = - 5 V 4. Collector Current : Ic = - 50 mA 5. Total Dissipation : Pc = 1 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |