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Description

:

Silicon PNP epitaxial planer type Transistor

Features : 

1. For low-frequency high breakdown voltage amplification Complementary to 2SC5346

2. Satisfactory foward current transfer ratio hFE collector current IC characteristics.

3. High collector to emitter voltage VCEO.

4. Small collector output capacitance Cob

5. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 150 V 

2. Collector to Emitter Voltage : Vceo = - 150 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 50 mA

5. Total Dissipation : Pc = 1 W

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -55 ~ +150°C



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Related Part Number


2SV-09  |  2SK950  

2SK94  |  2SK82  

2SK59  |  2SK43  


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