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Toshiba

2SA1972

Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon

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Description

PNP Triple Diffused Type Transistor

Features :

• High breakdown voltage: VCEO= −400 V

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 400 V

2. Collector to Emitter Voltage : Vceo = - 400 V

3. Emitter to Base Voltage : Vebo = - 7 V

4. Collector Current : Ic = - 0.5 A

5. Total Dissipation : Pc = 900 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

High-Voltage Switching

Please enter the part number.

2SV-09  |  2SK950

2SK94  |  2SK82

2SK59  |  2SK43

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