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Description

PNP Triple Diffused Planar Silicon Transistor

Features

1. High breakdown voltage (Vceo min=–900V).
2. Small Cob(Cobtyp=2.2pF).
3. High reliability (Adoption of HVP process).

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 900 V

2. Collector to Emitter Voltage : Vceo = - 900 V

3. Emitter to Base Voltage : Vebo = - 7 V

4. Collector Current : Ic = - 10mA

5. Total Dissipation : Pc = 1.75 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

1. High-Voltage Amplifier

2. High-Voltage Switching