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Toshiba
2SA1941-O(Q)
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, 3 Pin

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Description

:

Silicon PNP Triple Diffused Type Transistor

Features : 

• High breakdown voltage: VCEO= −140 V (min)

• Complementary to 2SC5198

• Recommended for 70-W high-fidelity audio frequency amplifier output stage.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 140 V

2. Collector to Emitter Voltage : Vceo = - 140 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 10 A

5. Total Dissipation : Pc = 100 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C


Applications :

Power Amplifier 



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