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Description

PNP Epitaxial Planar Silicon Transistor

Features

1.  Adoption of FBET process.
2.  High fT: fT=300MHz.
3.  High breakdown voltage : VCEO=200V.
4.  Small reverse transfer capacitance and excellent high-frequency characteristic :
   Cre =2.2pF/NPN, 2.7pF/PNP.
5.  Possible to offer the 2SA1853/2SC4827 devices in a tepa reel packaging, which facilitates automatic incertion.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 200 V

2. Collector to Emitter Voltage : Vceo = - 200 V

3. Emitter to Base Voltage : Vebo = - 3 V

4. Collector Current : Ic = - 200 mA

5. Total Dissipation : Pc = 1.3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :  

High-definition CRT  display video output. Wide band amplifier.