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Description

Features :

1. Adoption of FBET process.

2. Low collector-to-emitter saturation voltage.

3. Fast switching speed.

4. Small-sized package.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 50 V

2. Collector to Emitter Voltage : Vceo = - 40 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 500 mA

5. Total Dissipation : Pc = 200 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications : 

High-Speed Switching