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Description

PNP Epitaxial Planar Silicon Transistor

Features

1. High fT: fT=400MHz.
2. High breakdown voltage : VCEO=120Vmin.
3. Small reverse transfer capacitance and excellent HF response : Cre=1.7pF/NPN, 2.2pF/PNP.
4. Complementary PNP and NPN types.
5. Adoption of FBET process.
6. Micaless type : TO-126 plastic package.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 120 V

2. Collector to Emitter Voltage : Vceo = - 120 V

3. Emitter to Base Voltage : Vebo = - 3 V

4. Collector Current : Ic = - 200 mA

5. Total Dissipation : Pc = 1.3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. High-Definition CRT Display Video Output, wide-band amplifier.