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Description

1. High fT: fT=600MHz.

2. High breakdown voltage : VCEO=70Vmin.

3. Small reverse transfer capacitance and excellent high -frequency characteristic
: Cre =1.9pF/NPN, 2.4pF/PNP.

4. Complementary PNP and NPN types.

5. Adoption of FBET process.

6. Micaless type.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 80 V

2. Collector to Emitter Voltage : Vceo = - 70 V

3. Emitter to Base Voltage : Vebo = - 3 V

4. Collector Current : Ic = - 300 mA

5. Total Dissipation : Pc = 1.3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

1. High definition CRT display video output, wide-band amplifier.