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Description

PNP Epitaxial Planar Silicon Transistor

Features : 

1. On-chip bias resistance : R1=2.2kΩ, R2=10kΩ.

2. Small-sized package : SPA.

3.  Large current capacity : IC=500mA.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 50 V

2. Collector to Emitter Voltage : Vceo = - 50 V

3. Emitter to Base Voltage : Vebo = - 6 V

4. Collector Current : Ic = - 500 mA 

5. Total Dissipation : Pc = 300 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

Switching Applications (with Bias Resistance)