Description:PNP Epitaxial Planar Silicon Transistor Features : 1. Adoption of FBET process. Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = - 180 V 2. Collector to Emitter Voltage : Vceo = - 160 V 3. Emitter to Base Voltage : Vebo = - 5 V 4. Collector Current : Ic = - 140 mA 5. Total Dissipation : Pc = 1.3 W 6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C Applications : 1. Switching 2. Predrivers for 100W power amplifiers. |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |