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Description

PNP Epitaxial Planar Silicon Transistor

Features

1. High fT: fTtyp=400MHz.
2. High breakdown voltage : VCEO≥200V.
3. Small reverse transfer capacitance and excellent HF response
   : Cre = 1.4pF (NPN), 1.7pF (PNP).
4. Complementary PNP and NPN types.
5. Adoption of FBET process.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 200 V

2. Collector to Emitter Voltage : Vceo = - 200 V

3. Emitter to Base Voltage : Vebo = - 4 V

4. Collector Current : Ic = - 100 mA

5. Total Dissipation : Pc = 1.2 W 

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

1. Ultrahigh-Definition CRT Display Video Output 
2. Video output.
3. Color TV chroma output.
4. Wide-band amp.