PDF 2SA1338 Download

Description

PNP Epitaxial Planar Silicon Transistor

Features :

1. Adoption of FBET process.

2. High breakdown voltage : VCEO=(–)50V.

3. Large current capacitiy and high fT.

4. Very small-sized package permitting sets to be small sized, slim.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 60 V

2. Collector to Emitter Voltage : Vceo = - 50 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = 500 mA

5. Total Dissipation : Pc = 200 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

High-Speed Switching