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Description

PNP Epitaxial Planar Silicon Transistor

Features

1. Low saturation voltage.

2. Excellent dependence of hFEon current.

3. Fast switching time.

4. High-Speed Switching 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 80 V

2. Collector to Emitter Voltage : Vceo = - 60 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 15 A

5. Total Dissipation : Pc = 80 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

1. Various inductance, lamp drivers for electrical equipment.

2. Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).

3. Power amp (high-power care stereo, motor control).

4. High-speed siwtching (switching regulators, driver).