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Description

PNP Epitaxial Planar Silicon Transistor

Features :  

1. Low saturation voltage.
2. Excellent current dependence of hFE.
3. Short switching time.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 80 V

2. Collector to Emitter Voltage : Vceo = - 60 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 5 A

5. Total Dissipation : Pc = 30 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

1. Various inductance lamp drivers for electrical equipment.
2. Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).
3. Power amp (high power car stereo, motor controller).
4. High-speed switching (switching regulator, driver).