2SA1209 PDF Datasheet

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Description

:

PNP Epitaxial Planar Silicon Transistor

Featurers

1. Adoption of FBET process.

2. High breakdown voltage.

3. Good linearity of hFEand small Cob.

4. Fast switching speed.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 180 V

2. Collector to Emitter Voltage : Vceo = - 160 V

3. Emitter to Base Voltage : Vebo = - 5V

4. Collector Current : Ic = - 140 mA

5. Total Dissipation : Pc = 1 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. High-Voltage Switching

2. AF 100W Predriver