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Description

Silicon PNP Power Transistor

Features :

1. With TO-3 package

2. High power dissipations


Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 200 V

2. Collector to Emitter Voltage : Vceo = - 200 V

3. Emitter to Base Voltage : Vebo = - 6 V

4. Collector Current : Ic = - 17 A

5. Total Dissipation : Pc = 200 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C


Applications :

1. Power switching amplifier and general purpose