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Panasonic

2PG002

Insulated Gate Bipolar Transistor, 40A I(C), 410V V(BR)CES, N-Channel, TO-220AB

Description

For plasma display panel drive
For high speed switching circuits

Features

1. Low collector-emitter saturation voltage : Vcd(sat) < 2.4V
2. High speed hall time : Tf =190nsec(typ.)

Absolute Maximum Ratings TC = 25°C

1. Collector-emitter voltage (E-B short) : VCES = 410 V

2. Collector current : IC = 40 A

3. Peak collector current : IC = 160 A

4.Power dissipation : Pc = 40 W

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2PG002 | 2P4M

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