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2MBI100NB-120
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

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Description

: IGBT MODULE ( N series )

Features

• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (4~5Times Rated Current)

Applications

• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply



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Related Part Number


2MMT110  |  2MBI100NB-120  


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