Description:Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features : • Detection efficiency is very good. Absolute Maximum Ratings (Ta = 25°C) 1. Reverse voltage : VR = 10 V 2. Average rectified current : IO = 30 mA 3. Junction temperature : Tj = 125 °C 4. Storage temperature : Tstg = - 55 to +125 °C
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Related Part Number |
1SV237 | 1SS86 1SS198 | 1SS184 1SS106 | 1SMC5334 |