This device is a N-channel SuperMESH that is obtained through an optimization of STMicroelectronics’ well-established strip-based PowerMESH™ layout. In addition to pushing on resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This seriescomplement STs’ full range of high voltage Power MOSFETs.
Features :
1. 100% avalanche tested 2. Extremely high dv/dt capability 3. Gate charge minimized 4. ESD improved capability 5. New high voltage benchmark