Description:This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. Features 1. TYPICAL RDS(on) = 0.33 W 2. ± 30V GATE TO SOURCE VOLTAGE RATING 3. 100% AVALANCHE TESTED 4. REPETITIVE AVALANCHE DATA AT 100oC 5. LOW INTRINSIC CAPACITANCES 6. GATE GHARGE MINIMIZED 7. REDUCED THRESHOLD VOLTAGE SPREAD |
Related Part Number |
15NA50 | 15N03H 1591EGY | 1559-3 15104GOA | 150EBU02 |