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Description

The AOT11N60 & 11N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low R DS(on) , C iss and Crssalong with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

Product Summary

1. VDS = 700V @ 150 °C

2. ID (at VGS=10V) : 11A 

3. RDS(ON) (at VGS=10V) < 0.65 Ohm