Partnumber : RJP30H2A
Function : 360V, 35A, IGBT, Transistor
Package : TO-263
Manufacturers : RENESAS
Image
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 µA max
Absolute maximum ratings ( Ta=25°C )
1. Type of IGBT Channel : N-Channel
2. Maximum Power Dissipation (Pc), W: 60
3. Maximum Collector-Emitter Voltage |Vce|, V: 360
4. Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
5. Maximum Gate-Emitter Voltage |Veg|, V: 30
6. Maximum Collector Current |Ic|, A: 35
7. Maximum Junction Temperature (Tj), °C: 150
8. Maximum Collector Capacity (Cc), pF: 60
Datasheet PDF Download :
