Part Number : RJH30H2DPK-M0
Function : 360V, N-Channel IGBT
Package : TO-3PSG Type
Maker : Renesas Electronics
Pinouts : 
Description :
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ
3. High speed switching: tr = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES= 1 uA max
5. Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ
Applications :
High Speed Power Switching
Datasheet PDF Download :
Others datasheet of same file : RJH30H2, RJH30H2DPK
