Part Number : C3356
Function : 12V, NPN Epitaxial Silicon RF Transistor
Package : 3-pin Minimold Type
Maker : Renesas Electronics
Image : 
Description :
1. Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz
2. High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = 20 V
2. Collector to Emitter Voltage : Vceo = 12 V
3. Emitter to Base Voltage : Vebo = 3 V
4. Collector Current : Ic = 100 mA
5. Total Dissipation : Pc = 200 mW
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C
Applications :
1. Microwave Low-Noise Amplification
Datasheet PDF Download : 
Others datasheet of same file :
2SC3356, 2SC3356-A, 2SC3356-T1B, 2SC3356-T1B-A
