Part Number : C3356

Function : 12V, NPN Epitaxial Silicon RF Transistor

Package : 3-pin Minimold Type

Maker : Renesas Electronics

Image :
C3356 datasheet

Description :

1.  Low noise and high gain : NF = 1.1 dB TYP., Ga= 11 dB TYP. @ VCE= 10 V, IC= 7 mA, f = 1 GHz
2.   High power gain : MAG = 13 dB TYP. @ VCE= 10 V, IC= 20 mA, f = 1 GHz

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 20 V

2. Collector to Emitter Voltage : Vceo = 12 V

3. Emitter to Base Voltage : Vebo = 3 V

4. Collector Current : Ic = 100 mA

5. Total Dissipation : Pc = 200 mW

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. Microwave Low-Noise  Amplification


Datasheet PDF Download :
C3356 pdf

Others datasheet of same file :

2SC3356, 2SC3356-A, 2SC3356-T1B, 2SC3356-T1B-A

2021/05/08 13:21 2021/05/08 13:21

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