Part Number : 30G124
Function : 430V, 200A, Discrete IGBT ( Transistor )
Package : TO-220SIS Type
Maker : Toshiba
Image : 
Description :
The IGBT is insulated-gate bipolar transistor.
Features :
1. GT30G124
- Breakdown Voltage VCES(V) @Ta = 25°C : 430V
- IGBT Current Rating IC(A) @Ta = 25°C : 200A
2. GT30J124
- Breakdown Voltage VCES(V) @Ta = 25°C : 600V
- IGBT Current Rating IC(A) @Ta = 25°C : 200A
Applications and Features : Plasma display panels
Reference PDF : http://www.semicon.toshiba.co.jp/download/docs_pdf/SCE0004-08_catalog.pdf
Reference PDF : http://www.semicon.toshiba.co.jp/download/docs_pdf/BCE0010_catalog.pdf
Others datasheet of same file : 10G101, 10G102, 10J301, 10Q101, 10Q301
Datasheet PDF Download :
