Part Number : 30F124, GT30F124
Function : Discrete IGBT / 300V, 200A, Transistor
Package : TO-220SIS Type
Maker : Toshiba
Image : 
Description :
30F124 300V IGBT,
Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.
On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation.
Applications and Features : Plasma display panels
Reference PDF : http://www.semicon.toshiba.co.jp/download/docs_pdf/SCE0004-08_catalog.pdf
Reference PDF : http://www.semicon.toshiba.co.jp/download/docs_pdf/BCE0010_catalog.pdf
Others datasheet of same file : 3OF124, GT30F124, GT3OF124Datasheet PDF Download :
