Part Number : 30F121

Function : 300V, 120A, IGBT, Transistor

Package : TO-220SIS Type

Maker : Toshiba

Image :
30F121 datasheet

Description :

1. Vces : 300 V

2. Icp : 120 A

3. Pc : 35 W

IGBT: Insulated Gate Bipolar Transistor

● IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
● The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current.
● Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the carrier.

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of package

Datasheet PDF Download :
30F121 pdf

Others datasheet of same file :

GT30F121, GT35F131, GT30F122, GT30G131, GT30G121, GT30G122

2021/05/31 19:11 2021/05/31 19:11