Posted       

Part Number : UPD5702TU

Function : 3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT

Maker : California Eastern Laboratories.

Pinouts :
UPD5702TU datasheet

Description :

The µPD5702TU is a silicon laterallydiffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.

FEATURES
*  Output Power  : Pout=+21 dBm MIN. @Pin= −5 dBm, f =1.9 GHz, VDS=3.0 V
: Pout=+21 dBm MIN. @Pin= +2 dBm, f = 2.45 GHz, VDS=3.0 V
*  Single Supplyvoltage  : VDS= 3.0 V TYP.
*  Packaged in 8-pin Lead-Less Minimold (2.0 x2.2 x 0.5mm) suitable for high-densitysurface mounting.


Datasheet PDF Download :
UPD5702TU pdf

Others datasheet of same file : UPD5702TU
2015/01/28 13:52 2015/01/28 13:52

This Blog provides Datasheets and information for electronic components and semiconductors