Function : N-Channel Enhancement-Mode Vertical DMOS FETs / TO-236AB Package
Maker : Supertex Inc
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Datasheet PDF Download :
Others datasheet of same file : TN2101K1,TN2101ND