Function : N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET
Maker : STMicroelectronics
Using the latest high voltage MESH OVERAY process, STMicroelectronis has designed an advanved family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest Rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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Others datasheet of same file : H8NB90FI,STH8NB90FI