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Part Number : RJP63K2DPK-M0

Function : N-Channel IGBT

Maker : Renesas Electronics

Pinouts :
RJP63K2DPK-M0 datasheet

Description :

*  Trench gate and thin wafer technology (G6H-II series)
*  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
*  High speed switching: tr= 60 ns typ, tf= 200 ns typ.
*  Low leak current: ICES= 1 A max


Datasheet PDF Download :
RJP63K2DPK-M0 pdf

Others datasheet of same file : RJP63K2DPK, RJP63K2DPK-M0
2015/01/28 13:52 2015/01/28 13:52

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