Part Number : RJP30K3DPP-M0

Function : 40A, 360V, Silicon N Channel IGBT, Transistor 

Package : TO-220FL Type

Maker : Renesas Electronics

Pinouts :
RJP30K3DPP-M0 datasheet

Description :

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage VCE(sat)= 1.1V typ

3. High speed switching tr = 90 ns typ, tf = 250 ns typ

4. Low leak current ICES= 1 uA max

5. Isolated package TO-220FL

 

Applications : 

1. High Speed Power Switching


Datasheet PDF Download :
RJP30K3DPP-M0 pdf

Others datasheet of same file : RJP30, RJP30K3DPP, RJP30K3

2021/08/04 17:36 2021/08/04 17:36

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