Part Number : RJP30K3DPP-M0
Function : Silicon N Channel IGBT High Speed Power Switching
Maker : Renesas Electronics

Pinouts :
RJP30K3DPP-M0 datasheet

Description : Trench gate and thin wafer technology (G6H-II series), Low collector to emitter saturation voltage VCE(sat)= 1.1V typ, High speed switching tr = 90 ns typ, tf = 250 ns typ, Low leak current ICES= 1 A max, Isolated package TO-220FL
Datasheet PDF Download :
RJP30K3DPP-M0 pdf

Others datasheet of same file : RJP30,RJP30K3DPP-M0
2015/01/28 13:52 2015/01/28 13:52

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