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Part Number : RJP30H2DPK-M0
Function : Silicon N Channel IGBT High speed power switching
Maker : Renesas Electronics

Pinouts :
RJP30H2DPK-M0 datasheet

Description :

* Trench gate and thin wafer technology (G6H-II series)

*  Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

*  High speed switching: tf = 100 ns typ, tf = 180 ns typ
 

*  Low leak current: ICES= 1 A max


Datasheet PDF Download :
RJP30H2DPK-M0 pdf

Others datasheet of same file : RJP30H2DPK,RJP30H2DPK-M0,RJP30H2DPK-M0-T2
2015/01/28 13:52 2015/01/28 13:52

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