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Part Number : RJP30H1DPP-M0
Function : Silicon N Channel IGBT High speed power switching
Maker : Renesas Electronics

Pinouts :
RJP30H1DPP-M0 datasheet

Description :

* Trench gate and thin wafer technology (G6H-II series)

*  High speed switching: tr =80 ns typ., tf = 150 ns typ.

*  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

*  Low leak current: ICES= 1 A max.

*  Isolated package  TO-220FL


Datasheet PDF Download :
RJP30H1DPP-M0 pdf

Others datasheet of same file : RJP30H1,RJP30H1DPP-M0
2015/01/28 13:52 2015/01/28 13:52

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