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Part Number : RJP30H1DPD
Function : N-Channel Power MOSFET / TO-263
Maker : Renesas Electronics

Pinouts :
RJP30H1DPD datasheet

Description :

* Trench gate and thin wafer technology (G6H-II series)

* High speed switching: tr = 80 ns typ., tf = 150 ns typ.

* Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

* Low leak current: ICES= 1 A max.

 


Datasheet PDF Download :
RJP30H1DPD pdf

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2015/01/28 13:52 2015/01/28 13:52

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