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Part Number : RJP30E2DPK-M0
Function : Silicon N Channel IGBT High Speed Power Switching / Vce(sat) = 1.7V typ
Maker : Renesas Electronics

Pinouts :
RJP30E2DPK-M0 datasheet

Description :

* Trench gate technology (G5H series)
* Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
* High speed switching  tf = 150 ns typ
* Low leak current  ICES= 1 μA max


Datasheet PDF Download :
RJP30E2DPK-M0 pdf

Others datasheet of same file : RJP30E2DPK-M0,RJP30E2DPK-M0-T0
2015/01/28 13:52 2015/01/28 13:52

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