Posted       

Part Number : RJH30H2DPK-M0
Function : High Speed Power Switching
Maker : Renesas Electronics

Pinouts :
RJH30H2DPK-M0 datasheet

Description :

* Trench gate and thin wafer technology (G6H-II series)

* Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

* High speed switching: tr = 100 ns typ, tf = 180 ns typ

* Low leak current: ICES= 1 uA max

*  Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ


Datasheet PDF Download :
RJH30H2DPK-M0 pdf

Others datasheet of same file : RJH30H2DPK-M0
2015/01/28 13:52 2015/01/28 13:52

This Blog provides Datasheets and information for electronic components and semiconductors