Part Number : RJH30H1DPP-M0-T2

Function : 360V, 30A, Silicon N Channel IGBT

Package : TO-220FL Type

Maker : Renesas Electronics

Pinouts :
RJH30H1DPP-M0-T2 datasheet

Description :

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr =80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 A max.

5. Built-in Fast Recovery Diode: VF= 1.4 V typ., trr = 23 ns typ.

6. Isolated package: TO-220FL

Applications : 

High speed power switching 


Datasheet PDF Download :
RJH30H1DPP-M0-T2 pdf

Others datasheet of same file :

RJH30H1DPP, RJH30H1DPP-M0, RJH30H1

2021/08/16 17:29 2021/08/16 17:29

Posted