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Part Number : RJH30H1DPP-M0-T2
Function : Silicon N Channel IGBT High speed power switching
Maker : Renesas Electronics

Pinouts :
RJH30H1DPP-M0-T2 datasheet

Description :

* Trench gate and thin wafer technology (G6H-II series)


* High speed switching: tr =80 ns typ., tf = 150 ns typ.


* Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.


* Low leak current: ICES= 1 A max.


* Built-in Fast Recovery Diode: VF= 1.4 V typ., trr = 23 ns typ.


* Isolated package: TO-220FL
 


Datasheet PDF Download :
RJH30H1DPP-M0-T2 pdf

Others datasheet of same file : RJH30H1DPP,RJH30H1DPP-M0,RJH30H1DPP-M0-T2
2015/01/28 13:52 2015/01/28 13:52

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